Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
7.0
±0.3
3.0
±0.2
2.0
±0.2
3.5
±0.2
Unit: mm
0˚ to 0.15˚
2.5
±0.2
12.6
±0.3
7.2
±0.3
1.1
±0.1
Parameter
Collector-base voltage
(Emitter open)
2SB1172
2SB1172A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Rating
−60
−80
−60
−80
−5
−3
−5
15
1.3
150
−55
to
+150
Unit
V
1.0
±0.2
0.75
±0.1
0.4
±0.1
2.3
±0.2
4.6
±0.4
0.9
±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SB1172
(Base open)
2SB1172A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
1
2
3
V
A
A
W
°C
°C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Emitter open)
2SB1172
2SB1172A
2SB1172
2SB1172A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB1172
2SB1172A
V
BE
I
CES
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −80
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
CE
= −60
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
I
C
= −3
A, I
B
= −
0.375 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −1
A, I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
= −50
V
30
0.5
1.2
0.3
70
10
−1.2
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
−1.8
−200
−200
−300
−300
−1
250
mA
µA
V
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h
FE2
Publication date: February 2003
70 to 150
120 to 250
2.5
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
(1.0)
(1.0)
SJD00048AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
PCB Design
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