Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
7.0
±0.3
3.0
±0.2
2.0
±0.2
3.5
±0.2
Unit: mm
0˚ to 0.15˚
2.5
±0.2
12.6
±0.3
7.2
±0.3
1.1
±0.1
Parameter
Collector-base voltage
(Emitter open)
2SB1172
2SB1172A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Rating
−60
−80
−60
−80
−5
−3
−5
15
1.3
150
−55
to
+150
Unit
V
1.0
±0.2
0.75
±0.1
0.4
±0.1
2.3
±0.2
4.6
±0.4
0.9
±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SB1172
(Base open)
2SB1172A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
1
2
3
V
A
A
W
°C
°C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Emitter open)
2SB1172
2SB1172A
2SB1172
2SB1172A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB1172
2SB1172A
V
BE
I
CES
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −80
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
CE
= −60
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
I
C
= −3
A, I
B
= −
0.375 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −1
A, I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
= −50
V
30
0.5
1.2
0.3
70
10
−1.2
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
−1.8
−200
−200
−300
−300
−1
250
mA
µA
V
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h
FE2
Publication date: February 2003
70 to 150
120 to 250
2.5
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
(1.0)
(1.0)
SJD00048AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
京公网安备 11010802033920号
EEWORLD
