Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■
Features
•
High forward current transfer ratio h
FE
which has satisfactory linearity
•
Low collector-emitter saturation voltage V
CE(sat)
•
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
7.0
±0.3
3.0
±0.2
2.0
±0.2
3.5
±0.2
Unit: mm
0˚ to 0.15˚
2.5
±0.2
12.6
±0.3
7.2
±0.3
1.1
±0.1
Parameter
Collector-base voltage
(Emitter open)
2SB1172
2SB1172A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
T
a
=
25°C
Rating
−60
−80
−60
−80
−5
−3
−5
15
1.3
150
−55
to
+150
Unit
V
1.0
±0.2
0.75
±0.1
0.4
±0.1
2.3
±0.2
4.6
±0.4
0.9
±0.1
0˚ to 0.15˚
Collector-emitter voltage 2SB1172
(Base open)
2SB1172A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
V
1
2
3
V
A
A
W
°C
°C
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Junction temperature
Storage temperature
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Emitter open)
2SB1172
2SB1172A
2SB1172
2SB1172A
I
EBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
I
CEO
2SB1172
2SB1172A
V
BE
I
CES
V
CE
= −4
V, I
C
= −3
A
V
CE
= −60
V, V
BE
=
0
V
CE
= −80
V, V
BE
=
0
V
CE
= −30
V, I
B
=
0
V
CE
= −60
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −3
A
I
C
= −3
A, I
B
= −
0.375 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −1
A, I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
= −50
V
30
0.5
1.2
0.3
70
10
−1.2
V
MHz
µs
µs
µs
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
−1.8
−200
−200
−300
−300
−1
250
mA
µA
V
µA
Typ
Max
Unit
V
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h
FE2
Publication date: February 2003
70 to 150
120 to 250
2.5
±0.2
■
Absolute Maximum Ratings
T
C
=
25°C
(1.0)
(1.0)
SJD00048AED
1
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and semiconductors described in this material
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
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notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
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