Transistor
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA0719 (2SA719) and 2SA0720 (2SA720)
5.0±0.2
Unit: mm
4.0±0.2
G
G
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary pair with 2SA0719 and 2SA0720.
(Ta=25˚C)
Ratings
30
60
25
50
7
1
500
625
150
–55 ~ +150
Unit
V
I
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC1317
2SC1318
2SC1317
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
13.5±0.5
5.1±0.2
I
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
emitter voltage 2SC1318
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
mW
˚C
˚C
2.54±0.15
1 2 3
2.3±0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
I
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SC1317
2SC1318
2SC1317
2SC1318
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
30
60
25
50
7
85
40
160
90
0.35
1.1
200
6
*2
min
typ
max
0.1
Unit
µA
V
V
V
340
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
0.6
1.5
V
V
MHz
15
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Note.) The Part numbers in the Parenthesis show conventional part number.
Rank
h
FE1
1
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