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JANSD2N3500

Description
Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size106KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANSD2N3500 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN

JANSD2N3500 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusQualified
GuidelineMIL-19500; RH - 10K Rad(Si)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)1150 ns
Maximum opening time (tons)115 ns
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
DEVICES
LEVELS
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
2N3501
2N3501L
2N3501UB
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
2N3498* 2N3501*
2N3499* 2N3501*
100
100
6.0
500
1.0
5.0
-65 to +200
150
150
6.0
300
Unit
Vdc
Vdc
Vdc
mAdc
W
W
°C
Operating & Storage Junction Temperature Range
TO-5*
2N3498L, 2N3499L
2N2500L, 2N3501L
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Max.
30
175
Unit
°C/W
°C/W
* Electrical characteristics for “L” suffix devices are identical to the “non L”
corresponding devices.
1. Derate linearly 5.71 W/°C for T
A
> 25°C
2. Derate linearly 28.6 W/°C for T
C
> 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N3498, 2N3499
2N3500, 2N3501
Collector-Base Cutoff Current
V
CB
= 50Vdc
2N3498, 2N3499
V
CB
= 75Vdc
2N3500, 2N3501
V
CB
= 100Vdc
2N3498, 2N3499
V
CB
= 150Vdc
2N3500, 2N3501
V
(BR)CEO
100
150
50
50
10
10
Vdc
ηAdc
ηAdc
μAdc
μAdc
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
Unit
Symbol
Min.
Max.
I
CBO
3 PIN
2N3501UB
T4-LDS-0056 Rev. 1 (080812)
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