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2SC4117-GR(T5LTYDF

Description
Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size323KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4117-GR(T5LTYDF Overview

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon

2SC4117-GR(T5LTYDF Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
2SC4117
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4117
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
= 120 V
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
High h
FE:
h
FE
= 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1587
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
120
120
5
100
20
100
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-70
temperature/current/voltage and the significant change in
TOSHIBA
2-2E1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 0.006 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
I
CBO
I
EBO
Test Condition
V
CB
=
120 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
Min
200
Typ.
100
3.0
1.0
Max
0.1
0.1
700
0.3
10
V
MHz
pF
dB
Unit
μA
μA
h
FE
V
CE
=
6 V, I
C
=
2 mA
(Note)
V
CE (sat)
f
T
C
ob
NF
I
C
=
10 mA, I
B
=
1 mA
V
CE
=
6 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
6 V, I
C
=
0.1 mA, f
=
1 kHz,
R
G
=
10 kΩ
Note: h
FE
classification GR (G): 200 to 400, BL (L): 350 to 700,
( ) Marking symbol
Marking
Start of commercial production
1987-01
1
2014-03-01

2SC4117-GR(T5LTYDF Related Products

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Description Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS NPN 120V 0.1A SOT323
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code unknow unknow unknown unknown unknown unknown -
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage 120 V 120 V 120 V 120 V 120 V 120 V -
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 200 200 350 200 200 200 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 1 1 1 1 -
Number of terminals 3 3 3 3 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type NPN NPN NPN NPN NPN NPN -
surface mount YES YES YES YES YES YES -
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER -
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz -
Base Number Matches 1 1 1 1 1 1 -
Maker - - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor -
Maximum operating temperature - - 125 °C 125 °C 125 °C 125 °C -
Maximum power consumption environment - - 0.1 W 0.1 W 0.1 W 0.1 W -
Maximum power dissipation(Abs) - - 0.1 W 0.1 W 0.1 W 0.1 W -
VCEsat-Max - - 0.3 V 0.3 V 0.3 V 0.3 V -

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