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GM71C17403CLJ-6

Description
EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,
Categorystorage    storage   
File Size1MB,26 Pages
ManufacturerLG Semicon Co., Ltd.
Download Datasheet Parametric View All

GM71C17403CLJ-6 Overview

EDO DRAM, 4MX4, 60ns, CMOS, PDSO24,

GM71C17403CLJ-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLG Semicon Co., Ltd.
Reach Compliance Codeunknown
access modeFAST PAGE WITH EDO
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION
I/O typeCOMMON
JESD-30 codeR-PDSO-J24
JESD-609 codee0
memory density16777216 bit
Memory IC TypeEDO DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals24
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX4
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ24/26,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
refresh cycle2048
self refreshNO
Maximum standby current0.00015 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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