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2SD1841Q

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size232KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SD1841Q Overview

Transistor

2SD1841Q Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD1841
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 100V(Min)
·High
Current Capability
·Wide
Area of Safe Operation
·Complement
to Type 2SB1231
APPLICATIONS
·Designed
for motor drivers, relay drivers, converters and
other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25℃
w
.cn
i
em
cs
.is
w
w
VALUE
110
UNIT
V
100
6
V
V
25
A
40
8
3
W
120
150
-55~150
A
A
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature Range
isc Website:www.iscsemi.cn
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