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2N5365

Description
TRANSISTOR,BJT,PNP,40V V(BR)CEO,300MA I(C),TO-98
CategoryDiscrete semiconductor    The transistor   
File Size37KB,1 Pages
ManufacturerNational Semiconductor(TI )
Websitehttp://www.ti.com
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2N5365 Overview

TRANSISTOR,BJT,PNP,40V V(BR)CEO,300MA I(C),TO-98

2N5365 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.62 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)250 MHz
Base Number Matches1

2N5365 Related Products

2N5365 2N5354 2N4291 2N5355 2N5221
Description TRANSISTOR,BJT,PNP,40V V(BR)CEO,300MA I(C),TO-98 TRANSISTOR,BJT,PNP,25V V(BR)CEO,500MA I(C),TO-92 TRANSISTOR,BJT,PNP,30V V(BR)CEO,500MA I(C),TO-92VAR TRANSISTOR PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal TRANSISTOR,BJT,PNP,15V V(BR)CEO,500MA I(C),TO-92
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow compli
Maximum collector current (IC) 0.3 A 0.5 A 0.5 A 0.5 A 0.5 A
Configuration Single Single Single SINGLE Single
JESD-609 code e0 e0 e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.62 W 0.62 W 0.25 W 0.62 W 0.35 W
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 250 MHz 250 MHz 100 MHz 250 MHz 100 MHz
Base Number Matches 1 1 1 1 1
Minimum DC current gain (hFE) 40 40 100 100 -

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