2SD1994AR-C datasheet, PDF - EEWORLD Datasheet

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2SD1994AR-C: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size653KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SD1994AR-C Overview

Transistor

2SD1994AR-C Parametric

Parameter Name	Attribute value
Reach Compliance Code	compli
Base Number Matches	1

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2SD1994A

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

NPN

General Purpose Transistor

FEATURES

Low collector-emitter saturation voltage V

CE(sat)

Allowing supply with the radial taping

G

H

TO-92

1Emitter

2Collector

3Base

D

B

K

REF.

A

B

C

D

E

F

G

H

J

K

Millimeter

Min.

Max.

4.40

4.70

4.30

4.70

12.70

-

3.30

3.81

0.36

0.56

0.36

0.51

1.27 TYP.

1.10

-

2.42

2.66

0.36

0.76

J

A

Collector

2

3

Base

E

C

F

1

Emitter

ABSOLUTE MAXIMUM RATINGS

(T

a

= 25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current

Total Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

60

50

5

1

+150, -55 ~ +150

Unit

V

A

W

°C

ELECTRICAL CHARACTERISTICS

(T

a

= 25°C unless otherwise specified)

Parameter

Collector - Base Breakdown Voltage

Collector - Emitter Breakdown Voltage

Emitter - Base Breakdown Voltage

Collector Cut - Off Current

Emitter Cut - Off Current

DC Current Gain

Collector - Emitter Saturation Voltage

Base - Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE(1)

h

FE(2)

V

CE(sat)

V

BE(sat)

f

T

Cob

Min.

60

50

5

-

85

50

-

Typ.

-

200

-

Max.

-

0.1

340

-

0.4

1.2

-

20

Unit

V

μA

Test Conditions

I

C

= 10

μA,

I

E

= 0

I

C

= 2 mA, I

B

= 0

I

E

= 10

μA,

I

C

= 0

V

CB

= 20V, I

E

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 10V, I

C

= 500 mA

V

CE

= 5V, I

C

= 1 A

I

C

= 500mA, I

B

= 50 mA

I

C

= 500mA, I

B

= 50 mA

V

CE

= 10V, I

B

= 50 mA, f = 200MHz

V

CB

= 10V,I

E

= 0, f = 1MHz

V

MHz

pF

CLASSIFICATION OF h

FE(1)

Rank

Range

Q

85 - 170

R

120 - 240

S

170 - 340

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-December-2008 Rev. B

Page 1 of 3

2SD1994AR-C Related Products

	2SD1994AR-C	2SD1994AR	2SD1994AS-C	2SD1994AS	2SD1994A-C	2SD1994AQ	2SD1994AQ-C
Description	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor	Transistor
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Base Number Matches	1	1	1	1	1	1	1

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