SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BAV70LT1
DUAL SURFACE MOUNT SWITCHING DIODE
TECHNICAL DATA
*
Fast Switching Speed
*
High Conductance
*
Surface Mount Package Ideally Suited for Automatic Insertion
ABSOLUTE MAXIMUM RATINGS at T=25℃
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
working Peak Reverse Voltage DC
Blocking Voltage
RMS Reverse Voltage
Peak Forward Surge Current
Peak Forward Current
Package:
SOT-23
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
F
(Note)
P
D
Rating
100
Unit
V
70
V
49
500
200
350
2.8
V
mA
mA
mW
mW/℃
℃
℃
Power
Dissipation
Derate Above 25℃
Junction Temperature
Storage Temperature
Tj
Tstg
150
-65-150
Note:Diode Ceramic Substrate 10mmⅹ8.0mmⅹ0.7mm
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Symbol
Min
Max
715
Forward Voltage
V
F
855
1.0
1.25
2.5
Reverse Voltage leakage Current
I
R
100
60
Capacitance
Reverse Recovery Time
Cj
Trr
1.5
6.0
Unit
mV
mV
V
V
uA
uA
uA
PF
nS
Test Conditions
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=70V
V
R
=70V Tj=150℃
V
R
=25V Tj=150℃
V
R
=0 f=1.0MHz
I
F
=10mA to I
RR
=1.0mA
V
R
=6.0V R
L
=100Ω
Note:Diode On Ceramic Substrate 10mmⅹ8.0mmⅹ0.7mm
DEVICE MARKING:
BAV70LT1=A4
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BAV70LT1
DUAL SURFACE MOUNT SWITCHING DIODE
TECHNICAL DATA
BAV70LT1
300
IF
(mA)
200
MBD033
handbook, halfpage
300
MBG382
IF
(mA)
(1)
(2)
(3)
single diode loaded
200
double diode loaded
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MBG704
10
2
handbook, full pagewidth
IFSM
(A)
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
BAV70LT1
DUAL SURFACE MOUNT SWITCHING DIODE
TECHNICAL DATA
BAV70LT1
MGA885
MBG446
10
2
handbook, halfpage
0.8
IR
(
µ
A)
10
Cd
(pF)
VR = 75 V
max
1
0.6
75 V
0.4
10
1
25 V
0.2
typ
10
2
0
typ
0
100
T j ( o C)
200
0
4
8
12
VR (V)
16
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
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