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5962D9317707VNC

Description
FIFO, 16KX9, 40ns, Asynchronous, CMOS, 0.400 INCH, DFP-28
Categorystorage    storage   
File Size2MB,20 Pages
Manufacturere2v technologies
Download Datasheet Parametric View All

5962D9317707VNC Overview

FIFO, 16KX9, 40ns, Asynchronous, CMOS, 0.400 INCH, DFP-28

5962D9317707VNC Parametric

Parameter NameAttribute value
Makere2v technologies
Parts packaging codeDFP
package instructionDFP,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time40 ns
Other featuresRETRANSMIT
period time30 ns
JESD-30 codeR-XDFP-F28
JESD-609 codee4
memory density147456 bit
memory width9
Number of functions1
Number of terminals28
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX9
ExportableNO
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height3.3 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose10k Rad(Si) V
width10.16 mm
Features
First-in First-out Dual Port Memory
16384 bits x 9 Organization
Fast Flag and Access Times: 15, 30 ns
Wide Temperature Range: - 55°C to + 125°C
Fully Expandable by Word Width or Depth
Asynchronous Read/Write Operations
Empty, Full and Half Flags in Single Device Mode
Retransmit Capability
Bi-directional Applications
Battery Back-up Operation: 2V Data Retention
TTL Compatible
Single 5V ± 10% Power Supply
No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm
2
Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019
Quality grades: QML Q and V with SMD 5962-93177 and ESCC with specification
9301/048
Rad. Tolerant
High Speed
16 Kb x 9
Parallel FIFO
M67206H
Description
The M67206H implements a first-in first-out algorithm, featuring asynchronous
read/write operations. The FULL and EMPTY flags prevent data overflow and under-
flow. The Expansion logic allows unlimited expansion in word size and depth with no
timing penalties. Twin address pointers automatically generate internal read and write
addresses, and no external address information is required. Address pointers are
automatically incremented with the write pin and read pin. The 9 bits wide data are
used in data communications applications where a parity bit for error checking is nec-
essary. The Retransmit pin resets the Read pointer to zero without affecting the write
pointer. This is very useful for retransmitting data when an error is detected in the
system.
Using an array of eight transistors (8T) memory cell, the M67206H combines an
extremely low standby supply current (typ = 0.1
µA)
with a fast access time at 15 ns
over the full temperature range. All versions offer battery backup data retention capa-
bility with a typical power consumption at less than 2
µW.
The M67206H is processed according to the methods of the latest revision of the MIL
PRF 38535 (Q and V) or ESCC 9000.
Rev. 4143J–AERO–04/07
1

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