BUK663R7-75C datasheet, PDF - EEWORLD Datasheet

BUK663R7-75C: Description120A, 75V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK663R7-75C Overview

120A, 75V, 0.0058ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	523 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (ID)	120 A
Maximum drain-source on-resistance	0.0058 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	713 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

Leading-edge Automotive Power

MOSFETs

Next Generation MOSFETs for a wide range

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