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MD6003G4

Description
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TO-77,
CategoryDiscrete semiconductor    The transistor   
File Size19KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
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MD6003G4 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TO-77,

MD6003G4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionCYLINDRICAL, O-MBCY-W6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-77
JESD-30 codeO-MBCY-W6
JESD-609 codee4
Number of components2
Number of terminals6
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN AND PNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceGOLD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
MD6003
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
1.02
(0.040)
Max.
COMPLEMENTARY DUAL
GENERAL PURPOSE TRANSISTOR
NPN / PNP SILICON
12.7 (0.500)
Min.
6.10 (0.240)
6.60 (0.260)
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
3
2
4
5
6
0.74 (0.029)
1.14 (0.045)
1
45˚
0.71 (0.028)
0.86 (0.034)
TO77 PACKAGE
PIN 1 – Collector
PIN 2 – Base
PIN 3 – Emitter
PIN 4 – Emitter
PIN 5 – Base
PIN 6 – Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
30V
50V
5.0V
500mA
–65 to +200°C
Per Side
575mW
3.29mW/°C
1.8mW
10.3mW/°C
Total Device
625mW
3.57mW/°C
2.5mW
14.3mW/°C
P
D
P
D
Total Device Dissipation
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
@ T
C
= 25°C
Derate above 25°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 7/00

MD6003G4 Related Products

MD6003G4 MD6003
Description Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TO-77, Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 2-Element, NPN and PNP, Silicon, TO-77,
Is it Rohs certified? conform to conform to
Maker TT Electronics plc TT Electronics plc
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 30 V 30 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 30 30
JEDEC-95 code TO-77 TO-77
JESD-30 code O-MBCY-W6 O-MBCY-W6
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 200 °C 200 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN AND PNP NPN AND PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON

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