Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%
3. Switching characteristics are independent of operating junction temperatures
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2
2N7002E
TYPICAL CHARACTERISTICS
2.0
1.2
V
GS
= 10 V
9.0 V
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
1.6
0.8
1.2
3.5 V
0.8
3.0 V
0.4
0
0
2
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
2.5 V
2.0 V
6
0.4
T
J
= 25°C
0
0
T
J
= 125°C
2
T
J
= −55°C
4
6
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.4
V
GS
= 4.5 V
2.0
T
J
= 85°C
1.6
T
J
= 25°C
1.2
T
J
= −55°C
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2.4
Figure 2. Transfer Characteristics
V
GS
= 10 V
2.0
T
J
= 125°C
1.6
T
J
= 85°C
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
T
J
= −55°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 3. On−Resistance vs. Drain Current and
Temperature
1.6
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.2
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D
= 0.2 A
I
D
= 250 mA
1.2
I
D
= 75 mA
1.8
V
GS
= 4.5 V
1.4
V
GS
= 10 V
0.8
1.0
0.4
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0.6
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
2N7002E
TYPICAL CHARACTERISTICS
40
C
iss
30
T
J
= 25°C
V
GS
= 0 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
5
T
J
= 25°C
I
D
= 0.25 A
C, CAPACITANCE (pF)
4
3
20
C
oss
10
C
rss
0
0
4
8
12
16
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
2
1
0
0
0.2
0.4
0.6
0.8
1
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
10
V
GS
= 0 V
I
S
, SOURCE CURRENT (A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 60
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
T
J
= 85°C
0.1
T
J
= 25°C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
- 20
20
60
T, TEMPERATURE (°C)
100
140
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Temperature versus Gate
Threshold Voltage
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4
2N7002E
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
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