N-Channel JFET
General Purpose Amplifier
CORPORATION
2N4117 – 2N4119 / 2N4117A – 2N4119A
PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119
PIN CONFIGURATION
FEATURES
Leakage
•
Low Capacitance
•
Low
TO - 92
TO-72
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise noted)
Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +175
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/
o
C
NOTE:
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
G
D
C
S
G
D S
SOT-23
G
5007
D
S
PRODUCT MARKING (SOT-23)
SST4117
SST4118
SST4119
T17
T18
T19
ORDERING INFORMATION
Part
Package
Temperature Range
-55
o
C to +175
o
C
-55
o
C to +135
o
C
-55
o
C to +135
o
C
-55
o
C to +175
o
C
2N4117-19/A Hermetic TO-72
PN4117-19/A Plastic TO-92
SST4117-19 Plastic SOT-23
X2N4117-19/A Sorted Chips in Carriers
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified)
SYMBOL
BV
GSS
PARAMETER
Gate-Source Breakdown Voltage
Gate Reverse Current
I
GSS
A devices
A devices
V
GS(off)
I
DSS
g
fs
g
fs
g
os
C
iss
C
rss
Gate-Source Pinch-Off Voltage
Drain Current at Zero Gate Voltage (Note 1)
Common-Source Forward Transconductance (Note 1)
Common-Source Forward Transconductance (Note 2)
Common-Source Output Conductance
Common-Source Input Capacitance (Note 2)
Common-Source Reverse Transfer Capacitance (Note 2)
-0.6
70
60
3
3
1.5
4117/A
-40
-10
-1
-25
-2.5
-1.8
210
-1
80
70
5
3
1.5
4118/A
-40
-10
-1
-25
-2.5
-3
250
-2
100
90
10
3
pF
1.5
4119/A
-40
-10
-1
-25
-2.5
-6
330
µS
MIN MAX MIN MAX MIN MAX
UNITS
V
pA
nA
V
mA
TEST CONDITIONS
I
G
= -1µA, V
DS
= 0
V
GS
= -20V, V
DS
= 0
T
A
= +150
o
C
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0
V
DS
= 10V, f = 1kHz
V
GS
= 0, f = 30MHz
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, V
GS
= 0,
f = 1MHz
V
DS
= 10V, V
GS
= 0,
f = 1MHz
0.02 0.09 0.08 0.24 0.20 0.60
NOTES: 1.
Pulse test: Pulse duration of 2ms used during test.
2.
For design reference only, not 100% tested.
Embedded System
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