CMLT591ELEADFREE datasheet, PDF

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CMLT591ELEADFREE: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, PICOMINI-6; CategoryDiscrete semiconductor The transistor; File Size450KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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CMLT591ELEADFREE Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, PICOMINI-6

CMLT591ELEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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CMLT591E

w w w. c e n t r a l s e m i . c o m

SURFACE MOUNT SILICON

PNP TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT591E is a

PNP Low VCE(SAT) 1.0 Amp transistor, epoxy molded

in a space saving SOT-563 surface mount package

and designed for applications requiring a high current

capability and low saturation voltages.

MARKING CODE: L59

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

fT

Cob

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IB

PD

TJ, Tstg

Θ

JA

80

60

5.0

1.0

2.0

200

250

-65 to +150

500

UNITS

V

A

mA

mW

°C

°C/W

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

MIN

VCB=60V

VEB=4.0V

IC=100μA

IC=10mA

IE=100μA

IC=500mA, IB=50mA

IC=1.0A, IB=100mA

VCE=5.0V, IC=1.0A

VCE=5.0V, IC=1.0mA

VCE=5.0V,

VCE=10V,

VCB=10V,

IC=500mA

IC=1.0A

IC=2.0A

IC=50mA, f=100MHz

IE=0, f=1.0MHz

80

60

5.0

MAX

100

UNITS

nA

V

0.20

0.40

1.1

1.0

200

50

15

150

10

600

MHz

pF

R4 (12-February 2014)

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