K4H510838G-LC/LCC datasheet, PDF

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K4H510838G-LC/LCC: Description512Mb G-die DDR SDRAM Specification; Categorystorage storage; File Size22KB，1 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H510838G-LC/LCC Overview

512Mb G-die DDR SDRAM Specification

K4H510838G-LC/LCC Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2,
Contacts	66
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.55 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66
length	22.22 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	66
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified
Maximum seat height	1.2 mm
self refresh	YES
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
width	10.16 mm

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	K4H510838G-LC/LCC	K4H510438G-LC/LB0	K4H510438G	K4H510838G	K4H510438G-LC/LB3	K4H510838G-LC/LB3	K4H511638G	K4H511638G-LC/LCC
Description	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification	512Mb G-die DDR SDRAM Specification
Parts packaging code	TSOP2	TSOP2	-	-	TSOP2	TSOP2	-	TSOP2
package instruction	TSOP2,	TSOP2,	-	-	TSOP2,	TSOP2,	-	TSOP2,
Contacts	66	66	-	-	66	66	-	66
Reach Compliance Code	unknown	unknow	-	-	unknow	unknow	-	unknow
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99	-	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST
Maximum access time	0.55 ns	0.75 ns	-	-	0.6 ns	0.6 ns	-	0.55 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
JESD-30 code	R-PDSO-G66	R-PDSO-G66	-	-	R-PDSO-G66	R-PDSO-G66	-	R-PDSO-G66
length	22.22 mm	22.22 mm	-	-	22.22 mm	22.22 mm	-	22.22 mm
memory density	536870912 bit	536870912 bi	-	-	536870912 bi	536870912 bi	-	536870912 bi
Memory IC Type	DDR DRAM	DDR DRAM	-	-	DDR DRAM	DDR DRAM	-	DDR DRAM
memory width	8	4	-	-	4	8	-	16
Number of functions	1	1	-	-	1	1	-	1
Number of ports	1	1	-	-	1	1	-	1
Number of terminals	66	66	-	-	66	66	-	66
word count	67108864 words	134217728 words	-	-	134217728 words	67108864 words	-	33554432 words
character code	64000000	128000000	-	-	128000000	64000000	-	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
organize	64MX8	128MX4	-	-	128MX4	64MX8	-	32MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	-	-	TSOP2	TSOP2	-	TSOP2
Package shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE
Certification status	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	-	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	-	-	1.2 mm	1.2 mm	-	1.2 mm
self refresh	YES	YES	-	-	YES	YES	-	YES
Maximum supply voltage (Vsup)	2.7 V	2.7 V	-	-	2.7 V	2.7 V	-	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	-	-	2.3 V	2.3 V	-	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	-	-	2.5 V	2.5 V	-	2.5 V
surface mount	YES	YES	-	-	YES	YES	-	YES
technology	CMOS	CMOS	-	-	CMOS	CMOS	-	CMOS
Terminal form	GULL WING	GULL WING	-	-	GULL WING	GULL WING	-	GULL WING
Terminal pitch	0.65 mm	0.65 mm	-	-	0.65 mm	0.65 mm	-	0.65 mm
Terminal location	DUAL	DUAL	-	-	DUAL	DUAL	-	DUAL
width	10.16 mm	10.16 mm	-	-	10.16 mm	10.16 mm	-	10.16 mm

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