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K4H510838G-LC/LB3

Description
512Mb G-die DDR SDRAM Specification
Categorystorage    storage   
File Size22KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K4H510838G-LC/LB3 Overview

512Mb G-die DDR SDRAM Specification

K4H510838G-LC/LB3 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts66
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.6 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
length22.22 mm
memory density536870912 bi
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals66
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
organize64MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
width10.16 mm

K4H510838G-LC/LB3 Related Products

K4H510838G-LC/LB3 K4H510438G-LC/LB0 K4H510438G K4H510838G K4H510438G-LC/LB3 K4H510838G-LC/LCC K4H511638G K4H511638G-LC/LCC
Description 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification 512Mb G-die DDR SDRAM Specification
Parts packaging code TSOP2 TSOP2 - - TSOP2 TSOP2 - TSOP2
package instruction TSOP2, TSOP2, - - TSOP2, TSOP2, - TSOP2,
Contacts 66 66 - - 66 66 - 66
Reach Compliance Code unknow unknow - - unknow unknown - unknow
ECCN code EAR99 EAR99 - - EAR99 EAR99 - EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST - - FOUR BANK PAGE BURST FOUR BANK PAGE BURST - FOUR BANK PAGE BURST
Maximum access time 0.6 ns 0.75 ns - - 0.6 ns 0.55 ns - 0.55 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH - - AUTO/SELF REFRESH AUTO/SELF REFRESH - AUTO/SELF REFRESH
JESD-30 code R-PDSO-G66 R-PDSO-G66 - - R-PDSO-G66 R-PDSO-G66 - R-PDSO-G66
length 22.22 mm 22.22 mm - - 22.22 mm 22.22 mm - 22.22 mm
memory density 536870912 bi 536870912 bi - - 536870912 bi 536870912 bit - 536870912 bi
Memory IC Type DDR DRAM DDR DRAM - - DDR DRAM DDR DRAM - DDR DRAM
memory width 8 4 - - 4 8 - 16
Number of functions 1 1 - - 1 1 - 1
Number of ports 1 1 - - 1 1 - 1
Number of terminals 66 66 - - 66 66 - 66
word count 67108864 words 134217728 words - - 134217728 words 67108864 words - 33554432 words
character code 64000000 128000000 - - 128000000 64000000 - 32000000
Operating mode SYNCHRONOUS SYNCHRONOUS - - SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS
organize 64MX8 128MX4 - - 128MX4 64MX8 - 32MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 - - TSOP2 TSOP2 - TSOP2
Package shape RECTANGULAR RECTANGULAR - - RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE
Certification status Not Qualified Not Qualified - - Not Qualified Not Qualified - Not Qualified
Maximum seat height 1.2 mm 1.2 mm - - 1.2 mm 1.2 mm - 1.2 mm
self refresh YES YES - - YES YES - YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V - - 2.7 V 2.7 V - 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V - - 2.3 V 2.3 V - 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V - - 2.5 V 2.5 V - 2.5 V
surface mount YES YES - - YES YES - YES
technology CMOS CMOS - - CMOS CMOS - CMOS
Terminal form GULL WING GULL WING - - GULL WING GULL WING - GULL WING
Terminal pitch 0.65 mm 0.65 mm - - 0.65 mm 0.65 mm - 0.65 mm
Terminal location DUAL DUAL - - DUAL DUAL - DUAL
width 10.16 mm 10.16 mm - - 10.16 mm 10.16 mm - 10.16 mm
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