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S1DBM4G

Description
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size247KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

S1DBM4G Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AA, SMB, 2 PIN

S1DBM4G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMB, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
surface mountYES
Terminal formC BEND
Terminal locationDUAL
CREAT BY ART
S1AB - S1MB
1.0AMP Surface Mount Rectifiers
SMB/DO-214AA
Features
For surface mounted application
Glass passivated junction chip
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0
High temperature soldering:
260℃/10 seconds at terminals
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Terminal: Pure tin plated, lead free
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD RS-481
Weight: 0.093 grams
Ordering Information (example)
Part No.
S1AB
Package
SMB
Packing
850 / 7" REEL
Packing code
R5
Packing code
(Green)
R5G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
T
A
=25
T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
R
θjL
T
J
T
STG
S1
AB
50
35
50
S1
BB
100
70
100
S1
DB
200
140
200
S1
GB
400
280
400
1
30
1.1
5
50
12
30
- 55 to + 150
- 55 to + 150
S1
JB
600
420
600
S1
KB
800
560
800
S1
MB
1000
700
1000
Unit
V
V
V
A
A
V
uA
pF
O
C/W
O
O
C
C
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:F13
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