KSP6520/6521
KSP6520/6521
Amplifier Transistor
• Collector-Emitter Voltage: V
CEO
=25V
• Collector Power Dissipation: P
C
(max)=625mW
• Refer to 2N3904 for graphs
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
25
4
100
625
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Collector-Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
: KSP6520
: KSP6521
: KSP6520
: KSP6521
V
CE
(sat)
C
ob
NF
Collector-Emitter Saturation Voltage
Output Capacitance
Noise Figure
I
C
=100µA, V
CE
=10V
I
C
=2mA, V
CE
=10V
I
C
=50mA, I
B
=5mA
V
CB
=10V, I
E
=0
f=100KHz
I
C
=10µA, V
CE
=5V
R
S
=10KΩ
f=10Hz to 10KHz
100
150
200
300
Test Condition
I
C
=0.5mA, I
B
=0
I
C
=10, I
C
=0
V
CB
=30V, I
E
=0
V
CE
=20V, I
E
=0
Min.
25
4
50
50
Typl
Max.
Units
V
V
nA
nA
400
600
0.5
3.5
3
V
pF
dB
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
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device or system whose failure to perform can be
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or (b) support or sustain life, or (c) whose failure to perform
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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©2001 Fairchild Semiconductor Corporation
Rev. H3
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