DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Minimum diode capacitance ratio | 28.3 |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-34 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BB911A | BB911/A | |
|---|---|---|
| Description | DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode | DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, DO-34, Variable Capacitance Diode |
| Maker | NXP | NXP |
| package instruction | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknown | unknown |
| Shell connection | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE |
| Minimum diode capacitance ratio | 28.3 | 23.3 |
| Diode component materials | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY |
| JEDEC-95 code | DO-34 | DO-34 |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Package body material | GLASS | GLASS |
| Package shape | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal form | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL |