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IS42S32200AL-8T

Description
Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86
Categorystorage    storage   
File Size628KB,55 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS42S32200AL-8T Overview

Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86

IS42S32200AL-8T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts86
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G86
JESD-609 codee0
length22.22 mm
memory density67108864 bit
Memory IC TypeSYNCHRONOUS DRAM
memory width32
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals86
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX32
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
IS42S32200AL
512K Bits x 32 Bits x 4 Banks (64-MBIT)
Low Power SYNCHRONOUS DYNAMIC RAM
FEATURES
• Clock frequency: 125, 100 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable
CS
latency (2, 3 clocks)
A
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Industrial temperature availability
• Package 400-mil 86-pin TSOP II
ISSI
PIN
CONFIGURATION
(
86-Pin TSOP (Type II)
VCC
I/O0
VCCQ
I/O1
I/O2
GNDQ
I/O3
I/O4
VCCQ
I/O5
I/O6
GNDQ
I/O7
NC
VCC
DQM0
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
DQM2
VCC
NC
I/O16
GNDQ
I/O17
I/O18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
GND
I/O15
GNDQ
I/O14
I/O13
VCCQ
I/O12
I/O11
GNDQ
I/O10
I/O9
VCCQ
I/O8
NC
GND
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
GND
NC
I/O31
VCCQ
I/O30
I/O29
GNDQ
I/O28
I/O27
VCCQ
I/O26
I/O25
GNDQ
I/O24
GND
®
ADVANCE INFORMATION
NOVEMBER 2001
OVERVIEW
ISSI
's 64Mb Synchronous DRAM IS42S32200AL is
organized as 524,288 bits x 32-bit x 4-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
PIN
DESCRIPTIONS
Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
Write Enable
VCCQ
I/O19
I/O20
GNDQ
I/O21
I/O22
VCCQ
I/O23
VCC
A0-A10
BA0, BA1
I/O0 to I/O31
CLK
CKE
CS
RAS
CAS
WE
Vcc
GND
Vcc
Q
GND
Q
NC
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
DQM0 to DQM3 Input/Output Mask
This document contains ADVANCE INFORMATION data. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best
possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE
11/01/01
INFORMATION
Rev. 00C
1

IS42S32200AL-8T Related Products

IS42S32200AL-8T IS42S32200AL-8TI IS42S32200AL-10TI IS42S32200AL-10T
Description Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Synchronous DRAM, 2MX32, 7ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI )
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2
package instruction TSOP2, TSOP2, TSOP2, TSOP2,
Contacts 86 86 86 86
Reach Compliance Code compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 7 ns 7 ns 7 ns 7 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
JESD-609 code e0 e0 e0 e0
length 22.22 mm 22.22 mm 22.22 mm 22.22 mm
memory density 67108864 bit 67108864 bit 67108864 bit 67108864 bi
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
memory width 32 32 32 32
Humidity sensitivity level 3 3 3 3
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 86 86 86 86
word count 2097152 words 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000 2000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 85 °C 85 °C 70 °C
organize 2MX32 2MX32 2MX32 2MX32
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm
self refresh YES YES YES YES
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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