FYP2010DN — Schottky Barrier Rectifier
August 2009
FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
1.Anode
3.Anode
2. Cathode
1 2 3
TO-220
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T
C
= 120°C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Value
100
100
20
150
-65 to +150
Units
V
V
A
A
°C
Thermal Characteristics
Symbol
R
θJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Value
1.7
Units
°C/W
Electrical Characteristics
(per diode)
Symbol
V
FM *
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
Value
0.77
0.65
-
0.75
0.1
20
Units
V
I
RM *
mA
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
1
www.fairchildsemi.com
FYP2010DN — Schottky Barrier Rectifier
Typical Performance Characteristics
100
10
Forward Current, I
F
[A]
10
Reverse Current, I
R
[mA]
1
T
J
=125 C
o
1
0.1
T
J
=75 C
o
T
J
=125 C
0.1
o
T
J
=75 C
T
J
=25 C
o
o
0.01
T
J
=25 C
o
0.01
0.0
1E-3
0.5
1.0
1.5
20
40
60
80
100
Forward Voltage Drop, V
F
[V]
Reverse Voltage, V
R
[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
1000
900
800
700
600
500
400
300
200
T
J
=25 C
o
Transient Thermal Impedance [ C/W]
Juntion Capacitance, C
J
[pF]
o
1
100
90
80
0
20
40
60
80
100
100µ
1m
10m
100m
1
10
Reverse Voltage, V
R
[V]
Pulse Duration [s]
Figure 3. Typical Junction Capacitance
(per diode)
Figure 4. Thermal Impedance Characteristics
(per diode)
25
250
Average Forward Current, I
F(AV)
[A]
DC
20
Max. Forward Surge Current, I
FSM
[A]
80
100
o
200
15
150
10
100
5
50
0
0
20
40
60
120
140
160
0
1
10
100
Case Temperature, T
C
[ C]
Number of Cycles @ 60Hz
Figure 5. Forward Current Derating Curve
Figure 6. Non-Repetive Surge Current
(per diode)
© 2009 Fairchild Semiconductor Corporation
FYP2010DN Rev. B1
2
www.fairchildsemi.com
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Rev. I41
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