BF245C-D27Z datasheet, PDF - EEWORLD Datasheet

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BF245C-D27Z: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size25KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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BF245C-D27Z Overview

Transistor

BF245C-D27Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Reach Compliance Code	unknown
FET technology	JUNCTION
JESD-609 code	e3
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.35 W
surface mount	NO
Terminal surface	Matte Tin (Sn)

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BF245A/BF245B/BF245C

N-Channel Amplifiers

• This device is designed for VHF/UHF amplifiers.

• Sourced from process 50.

TO-92

1. Gate 2. Source 3. Drain

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

STG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Total Device Dissipation @T

=25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

Parameter

Value

-30

350

2.8

- 55 ~ 150

Units

mW/°C

°C

Electrical Characteristics

=25°C unless otherwise noted

Symbol

Parameter

Test Condition

= 0, I

= 1µA

= 15V, I

= 200µA

Min.

-30

-0.4

-1.6

-3.2

-0.5

-2.2

-3.8

-7.5

-8

-5

Max.

Units

Off Characteristics

(BR)GSS

Gate-Source Breakdown Voltage

Gate-Source

BF245A

BF245B

BF245C

(off)

GSS

Gate-Source Cut-off Voltage

Gate Reverse Current

= 15V, I

= 10nA

= -20V, V

= 0

On Characteristics

DSS

Zero-Gate Voltage Drain Current

BF245A

BF245B

BF245C

On Characteristics

Common Source Forward

Transconductance

= 15V, V

= 0

6.5

= 15V, V

= 0, f = 1KHz

mmhos

Rev. A1, June 2003

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