BIC703C
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-985D (Z)
5th. Edition
Mar. 2001
Features
•
Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.);
To reduce using parts cost & PC board space.
•
High |yfs| ;
|yfs| = 29 mS typ. ( f = 1kHz)
•
Low noise;
NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.8 dB typ. (at f = 900 MHz)
•
Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200pF, Rs = 0 conditions.
•
Provide mini mold package; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Notes:
1.
2.
Marking is “CZ–”.
BIC703C is individual type number of HITACHI BICMIC.
BIC703C
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
30
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate1 to source breakdown
voltage
Gate2 to source breakdown
voltage
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
Min
6
+6
+6
—
0.8
12
24
1.6
0.6
—
23
—
17
—
Typ
—
—
—
—
1.1
15
29
2.0
1.0
0.022
28
1.0
22
1.8
Max
—
—
—
+100
1.5
18
34
2.4
1.4
0.05
—
1.8
—
2.4
Unit
V
V
V
nA
V
mA
mS
pF
pF
pF
dB
dB
dB
dB
Test Conditions
I
D
= 200µA
V
G2S
= 0,V
G1
= open
I
G1
= +1mA, V
G2S
= V
DS
= 0
I
G2
= +10µA, V
G1S
= V
DS
= 0
V
G2S
= +5V, V
G1S
= V
DS
= 0
V
DS
= 5V, I
D
= 100µA
V
G1
= open
V
DS
= 5V , V
G2S
= 4V
V
G1
= open
V
DS
= 5V, I
D
= 15mA
V
G2S
=4V, f = 1kHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 1MHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 200MHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 900MHz
Gate2 to source cutoff current I
G2SS
Gate2 to source cutoff voltage V
G2S(off)
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
I
D(op)
|y
fs
|
c
iss
c
oss
Reverse transfer capacitance c
rss
Power gain
Noise figure
Power gain
Noise figure
PG1
NF1
PG2
NF2
2
BIC703C
Test Circuits
•
DC Biasing Circuit for Operating Characteristic Items
(I
D(op)
, |yfs|, Ciss, Coss, Crss, NF, PG)
V
G1
V
G2
Gate 2
Gate 1
Open
A
I
D
Drain
Source
•
200 MHz Power Gain, Noise Figure Test Circuit
V
T
1000p
V
G2
1000p
V
T
1000p
47k
Input(50Ω)
L1
1000p
36p
1000p
47k
BICMIC
L2
1000p
47k
Output(50Ω)
10p max
1000p
1SV70
RFC
1SV70
1000p
V
D
Unit: : Resistance (Ω)
Capacitance (F)
L1 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :
φ1mm
Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :
φ1mm
Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BIC703C
•
900 MHz Power Gain, Noise Figure Test Circuit
VG2
C4
VD
C5
R1
C3
G2
Input
L1
L2
G1
R2
D
L3
S
RFC
Output
L4
C1
C2
C1, C2
C3
C4, C5
R1
R2
:
:
:
:
:
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
4.7 kΩ
L1:
10
10
8
L2:
26
3
3
(φ1mm Copper wire)
Unit : mm
21
L3:
7
L4:
29
10
7
18
10
RFC :
φ1mm
Copper wire with enamel 4turns inside dia 6mm
4
BIC703C
Maximum Channel Power
Dissipation Curve
Typical Output Characteristics
V
G1
= open
I
D
(mA)
150
16
V
G2S
= 4 V
3V
8
2V
Channel Power Dissipation
Pch (mW)
200
20
12
100
50
Drain Current
4
1V
0
50
100
150
Ta (°C)
200
0
1
2
3
4
V
DS
(V)
5
Ambient Temperature
Drain to Source Voltage
Forward Transfer Admittance | yfs | (mS)
Forward Transfer Admittance
vs. Gate1 Voltage
50
40
30
25
Power Gain PG (dB)
20
15
10
5
0
1
Power Gain vs.
Gate2 to Source Voltage
30
20
V
G1S
= 4 V
3V
10
1V
0
1.0
Gate1 Voltage V
G1
2.0
(V)
2V
V
DS
= 5 V
V
G1
= open
f = 200 MHz
4
2
3
Gate2 to Source Voltage V
G2S
(V)
5
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