May 2000
BSS84 / BSS110
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is designed to minimize on-state resistance, provide
rugged and reliable performance and fast switching. They
can be used, with a minimum of effort, in most applications
requiring up to 0.17A DC and can deliver pulsed currents up
to 0.68A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
BSS84: -0.13A, -50V. R
DS(ON)
= 10
Ω
@ V
GS
= -5V.
BSS110: -0.17A, -50V. R
DS(ON)
= 10
Ω
@ V
GS
= -10V
Voltage controlled p-channel small signal switch.
High density cell design for low R
DS(ON)
.
High saturation current
.
____________________________________________________________________________________________
S
G
BSS110
(TO-236AB)
BSS84
D
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
BSS84
BSS110
Units
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 20 K
Ω
)
Gate-Source Voltage - Continuous
Drain Current - Continuous @ T
A
= 30/35
o
C
- Pulsed
@ T
A
= 25
o
C
T
A
= 25
°
C
Maximum Power Dissipation
-0.13
-0.52
0.36
-50
-50
±20
-0.17
-0.68
0.63
-55 to 150
300
V
V
V
A
W
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
200
°C/W
© 2000 Fairchild Semiconductor Corporation
BSS84 Rev. C2 / BSS110. Rev. A3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -50 V,
V
GS
= 0 V
V
DS
= -25 V, V
GS
= 0 V
T
J
= 125°C
All
All
-50
-15
-60
-0.1
V
µA
µA
µA
nA
I
GSSR
V
GS(th)
R
DS(ON)
g
FS
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= -1 mA
V
GS
= -5V, I
D
= -0.10 A
V
GS
= -10 V, I
D
= -0.17 A
V
DS
= -25 V, I
D
= -0.10A
V
DS
= -10 V, I
D
= -0.17 A
All
-10
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
All
BSS84
BSS110
BSS84
BSS110
-0.8
-1.75
3.2
2.2
-2
10
10
V
Ω
S
Forward Transconductance
0.05
0.05
0.27
0.29
37
37
16
5
45
40
25
12
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
I
S
I
SM
V
SD
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
BSS84
BSS110
pF
pF
pF
All
All
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
V
DD
= -30 V, I
D
= -0.27 A,
V
GS
= -10 V, R
GEN
= 50
Ω
All
All
All
All
12
50
10
25
nS
nS
nS
nS
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Source Diode Current
Maximum Pulsed Source Diode Current
(Note 1)
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.26 A
V
GS
= 0 V, I
S
= -0.34 A
BSS84
BSS110
BSS84
BSS110
(Note 1)
(Note 1)
-0.13
-0.17
-0.52
-0.68
-0.95
-1
-1.2
-1.2
A
A
V
BSS84
BSS110
Note:
1. Pulse Test: Pulse Width < 300
µ
s, Duty Cycle < 2.0%.
BSS84 Rev. C2 / BSS110. Rev. A3
Typical Electrical Characteristics
-1
I
D
, DRAIN-SOURCE CURRENT (A)
DRAIN-SOURCE ON-RESISTAN CE
3
V
GS
= -10V
-0.8
-8.0 -6.0
V
GS
= -3V
2 .5
-4.5
-0.6
R
DS(on)
, NORMALIZED
-5.0
-3.5
-4 .0
-4.0
2
-4.5
-5.0
-0.4
-3.5
1 .5
-6 .0
-8 .0
-1 0
-0.2
-3.0
-2.5
0
-1
-2
-3
-4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
-5
-6
1
0 .5
-0.2
I
D
-0.4
-0.6
, DRA IN CURRENT (A)
-0.8
-1
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
1.6
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
3
I
D
= -0.13A
1.4
V
GS
= -10V
2.5
R
DS(ON)
, NORMALIZED
V
GS
= -10V
R
DS(on)
, NORMALIZED
1.2
2
T = 125°C
J
1
1.5
25°C
1
0.8
-55°C
0.5
-0.2
-0.4
-0.6
I
D
, DRAIN CURRENT (A)
-0.8
-1
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation
with Drain Current and Temperature
-1
1.1
V
DS
= -10V
I
D
, DRAIN CURRENT (A)
-0 .8
T
J
= -55°C
25°C
GATE-SOURCE THRESHOLD VOLTAGE
V
DS
= V
GS
I
D
= -1m A
125°C
1.05
-0 .6
V
th
, NORMALIZED
1
-0 .4
0.95
-0 .2
0.9
0
-2
-4
-6
V
GS
, GATE TO SOURCE VOLTAGE (V)
-8
0.85
-5 0
-25
0
25
50
75
100
T
J
, JUNCTION TEM PERATURE (°C)
125
150
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation
with Temperature
BSS84 Rev. C2 / BSS110. Rev. A3
Typical Electrical Characteristics
(continued)
1 .1
DRAIN-SOURCE BREAKDOWN VOLTAGE
, REVERSE DRAIN CURRENT (A)
1
I
D
= -250µA
1 .0 5
0.5
0.2
0.1
0.05
V
GS
= 0 V
, NORMALIZED
T J = 125°C
25°C
-55°C
1
BV
S D
0.01
0.005
0 .9 5
S
-I
0 .9
-50
0.001
0.2
S
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
150
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 7. Breakdown Voltage
Variation with Temperature
Figure 8. Body Diode Forward Voltage
Variation with Source
Current and Temperature
70
10
C iss
-V
GS
, GATE-SOURCE VOLTAGE (V)
50
30
I
D
= -0.13A
8
V
DS
= -10V
-20V
-40V
CAPACITANCE (pF)
20
C oss
6
10
4
5
3
2
0 .1
C rss
f = 1 MHz
V
GS
= 0V
2
0
0 .2
0 .5
1
2
5
10
-V
DS
, DRA IN TO SOURCE VOLTAGE (V)
20
30
50
0
0 .5
1
Q
g
, GATE CHARGE (nC)
1 .5
2
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
V
IN
D
t
on
R
L
V
OUT
V
OUT
10%
t
off
t
r
90%
t
d(off)
90%
t
f
V
GS
R
GEN
10%
90%
G
DUT
S
V
IN
10%
50%
50%
PULSE W IDTH
INVERTED
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
BSS84 Rev. C2 / BSS110. Rev. A3
Typical Electrical Characteristics
(continued)
0 .5
, TRANSCONDUCTANCE (SIEM ENS)
2
T J = -55°C
1
25°C
-I
D
, DRA IN CURRENT (A)
0 .4
10
S(
ON
)
i
Lim
t
0u
0.5
RD
1m
10
10
0m
ms
s
s
s
0 .3
125°C
0 .2
0.1
0.05
1s
10
V
GS
= -10V
SINGLE PULSE
T
A
= 25°C
s
DC
0 .1
g
FS
V
DS
= -10V
0
-0.2
-0.4
-0.6
I
D
, DRAIN CURRENT (A)
-0.8
-1
0.01
0.005
1
2
5
10
20
30
- V
DS
, DRAIN -SOURCE VOLTAGE (V)
50
80
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 14. Maximum Safe Operating Area
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
D = 0.5
0 .2
0 .1
0 .05
0 .02
0 .01
P(pk)
r(t), NORMALIZED EFFECTIVE
R
θJA
(t) = r(t) * R
θJA
o
R
= 3 5 0 C/W
θJA
0.01
Single Pulse
t
1
t
2
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using a circuit board with 175
o
C/W
typical case-to-ambient thermal resistance
.
BSS84 Rev. C2 / BSS110. Rev. A3
京公网安备 11010802033920号
EEWORLD
