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2N2035

Description
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size290KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N2035 Overview

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN

2N2035 Parametric

Parameter NameAttribute value
Parts packaging codeTO-8
package instructionTO-8, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-8
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)14 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz
Base Number Matches1
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