2N6047 datasheet, PDF - EEWORLD Datasheet

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2N6047: DescriptionPower Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6047 Overview

Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,

2N6047 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1689289612
Parts packaging code	TO-63
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-63
JESD-30 code	O-MUPM-D3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	114 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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2N6047 Related Products

	2N6047	2N6279	2N5251	2N3266
Description	Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,	Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN	Power Bipolar Transistor, 90A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, TO-114, 3 PIN	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-63	TO-63	TO-114	TO-63
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknow	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	20 A	50 A	90 A	25 A
Collector-emitter maximum voltage	100 V	120 V	150 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	30	10	20
JEDEC-95 code	TO-63	TO-63	TO-114	TO-63
JESD-30 code	O-MUPM-D3	O-MUPM-X3	O-MUPM-X3	O-MUPM-X3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	SOLDER LUG	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Objectid	1689289612	1439169837	-	1439169395
package instruction	-	TO-63, 3 PIN	POST/STUD MOUNT, O-MUPM-X3	TO-63, 3 PIN

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