2N3266 datasheet, PDF - EEWORLD Datasheet

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2N3266: DescriptionPower Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size34KB，1 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N3266 Overview

Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

2N3266 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1439169395
Parts packaging code	TO-63
package instruction	TO-63, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-63
JESD-30 code	O-MUPM-X3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON

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2N3266 Related Products

	2N3266	2N6047	2N6279	2N5251
Description	Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN	Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,	Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN	Power Bipolar Transistor, 90A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, TO-114, 3 PIN
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-63	TO-63	TO-63	TO-114
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	25 A	20 A	50 A	90 A
Collector-emitter maximum voltage	60 V	100 V	120 V	150 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	20	30	10
JEDEC-95 code	TO-63	TO-63	TO-63	TO-114
JESD-30 code	O-MUPM-X3	O-MUPM-D3	O-MUPM-X3	O-MUPM-X3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT	POST/STUD MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	UNSPECIFIED	SOLDER LUG	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Objectid	1439169395	1689289612	1439169837	-
package instruction	TO-63, 3 PIN	-	TO-63, 3 PIN	POST/STUD MOUNT, O-MUPM-X3

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