Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1439169837 |
| Parts packaging code | TO-63 |
| package instruction | TO-63, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 50 A |
| Collector-emitter maximum voltage | 120 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 30 |
| JEDEC-95 code | TO-63 |
| JESD-30 code | O-MUPM-X3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| 2N6279 | 2N6047 | 2N5251 | 2N3266 | |
|---|---|---|---|---|
| Description | Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN | Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, | Power Bipolar Transistor, 90A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, 3 Pin, TO-114, 3 PIN | Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| Parts packaging code | TO-63 | TO-63 | TO-114 | TO-63 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknow | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 50 A | 20 A | 90 A | 25 A |
| Collector-emitter maximum voltage | 120 V | 100 V | 150 V | 60 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 30 | 20 | 10 | 20 |
| JEDEC-95 code | TO-63 | TO-63 | TO-114 | TO-63 |
| JESD-30 code | O-MUPM-X3 | O-MUPM-D3 | O-MUPM-X3 | O-MUPM-X3 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | UNSPECIFIED | SOLDER LUG | UNSPECIFIED | UNSPECIFIED |
| Terminal location | UPPER | UPPER | UPPER | UPPER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Objectid | 1439169837 | 1689289612 | - | 1439169395 |
| package instruction | TO-63, 3 PIN | - | POST/STUD MOUNT, O-MUPM-X3 | TO-63, 3 PIN |
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