USB Downstream Port Terminator
with VBUS ESD Protection
PACUSBVB-D1/D2/D3
Features
•
A low-capacitance USB downstream port
terminator, EMI filter, and transient over-voltage
protector in a single surface-mounted package
ESD protection to
±20kV
contact discharge, per
MIL-STD-883D, Method 3015
ESD protection to
±15kV
contact discharge, per
IEC 61000-4-2 International Standard
Provides ESD protection for the VBUS line
Compact SOT23-6 package saves board space
and lowers manufacturing costs compared to
discrete solutions
Capacitors matched to a precision exceeding the
USB specification
Lead-free versions available
Product Description
The PACUSBVB-D1/D2/D3 is a single-channel USB
downstream-port termination network. It integrates
EMI/RFI filter components R1 and C1 as
recommended by the USB specification, as well as
the required 15kW pull-down resistors (R2) to GND.
In addition, PACUSBVB-D1/D2/D3 provides a very
high level of protection for sensitive electronic
components that may be subjected to electrostatic
discharge (ESD). The device pins will safely dissipate
ESD strikes of ±15kV, exceeding the maximum
requirements of the IEC 61000-4-2 international
standard. Using the MIL-STD-883D (Method 3015)
specification for Human Body Model (HBM) ESD, all
pins are protected from contact discharges to ±20kV.
The PACUSBVB-D1/D2/D3 also features a fifth zener
diode (cathode at pin 5) which provides ESD
protection for the USB VBUS line.
There are three options for the value of the series
resistor R1: 15Ω, 33Ω, and 22Ω.
This series
resistance, plus the USB driver output resistance,
must be close to the USB cable’s characteristic
impedance of 45W (each side) to minimize
transmission line reflections.
The PACUSBVB-D1/D2/D3 is housed in a 6-pin
SOT23 package and is available with optional lead-
free finishing.
•
•
•
•
•
•
Applications
•
•
•
•
•
ESD protection and termination of USB
downstream ports
Desktop PCs
Notebooks
Set-top boxes
USB hubs
©2010 SCILLC. All rights reserved.
June 2010 – Rev. 2
Publication Order Number:
PACUSBVBD1/D2/D3/D
PACUSBVBD1/D2/D3
Electrical•Schematic
PIN DESCRIPTIONS
PINS
1
2
3
4
5
6
NAME
D+ CNTR
GND
D- CNTR
D- CONN
V
BUS
D+ CONN
DESCRIPTION
D+ Data to the USB controller circuitry
Ground Pin
D- Data to the USB controller circuitry
D- Data to the USB connector
V
BUS
input pin
D+ Data to the USB connector
Rev. 2 | Page 2 of 9 | www.onsemi.com
PACUSBVBD1/D2/D3
Ordering Information
PART NUMBERING INFORMATION
Standard Finish
Pins
6
R1 Value
15
Ω
22
Ω
33
Ω
Package
SOT23-6
Ordering Part
Number
1
PACUSBVB-D2Y6
PACUSBVB-D3Y6
PACUSBVB-D1Y6
Lead-free Finish
Ordering Part
Number
1
PACUSBVB-D2Y6R
PACUSBVB-D3Y6R
PACUSBVB-D1Y6R
Part Marking
UD2
UD3
UD1
Part Marking
UD2R
UD3R
UD1R
Note 1: Parts are shipped in Tape & Reel form unless otherwise specified.
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
Power Dissipation per Resistor
Package Power Dissipation
Voltage on any pin (DC)
RATING
-65 to +150
100
200
6
UNITS
°C
mW
mW
V
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature
V
BUS
Input Voltage
RATING
-40 to +85
5
UNITS
°C
V
Rev. 2 | Page 3 of 9 | www.onsemi.com
PACUSBVBD1/D2/D3
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL
R1
PARAMETER
Resistance of R1 Resistor
(PACUSBVB-D2Y6/Y6R)
Resistance of R1 Resistor
(PACUSBVB-D3Y6/Y6R)
Resistance of R1 Resistor
(PACUSBVB-D1Y6/Y6R)
Resistance of R2 Resistor
Temperature Coefficient of
Resistance
Capacitance of C1 Capacitor
0 VDC; 30 mVAC; 1MHz; 25°C
2.5 VDC; 30 mVAC; 1MHz; 25°C
TOL
CM
I
LEAK
V
RB
V
SIG
Matching Tolerance of C1
Capacitors
Diode Leakage Current to GND
Diode Reverse Bias Voltage
Signal Voltage:
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
MIL-STD-883D, Method 3015
(HBM)
IEC 61000-4-2 Contact
Discharge
V
CL
Clamping voltage under ESD
discharge
Pins 1, 3; Notes 1 and 2
Pins 4, 5; Note 1
Pins 4, 5; Note 1
MIL-STD-883D, Method 3015
+8kV; Note 3
MIL-STD-883D, Method 3015 -8kV;
Note 3
1MHz; 25°C
Measured at 3.3 VDC, 25°C
I
LOAD
= 10μA; T
A
= 25°C
5.5
1
37.6
25.6
CONDITIONS
T
A
= 25°C
MIN
12
TYP
15
MAX
18
UNITS
Ω
Ω
Ω
R1
T
A
= 25°C
17.6
22
26.4
R1
T
A
= 25°C
26.4
33
39.6
R2
TCR
T
A
= 25°C
15
+1300
kΩ
ppm/°
C
56.4
38.4
+2
100
pF
pF
%
nA
V
C1
47
32
I
LOAD
= 10mA; T
A
= 25°C
I
LOAD
= 10mA; T
A
= 25°C
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
V
ESD
±
4
±
20
±
15
12
kV
kV
kV
V
-7
V
Note 1: ESD voltage applied to pins with respect to GND, one at a time; unused pins are left open.
Note 2: Pins 1 and 3 are not connected to the USB port connector, and therefore are not exposed to external ESD hazards.
Thus, they do not require the high ESD protection levels provided for pins 4, 5, and 6.
Note 3: ESD Clamping Voltage is measured at the opposite end of R1 from the pin to which the ESD discharge is applied (e.g., if
ESD is applied to pin 6, then the clamping voltage is measured at pin 1).
Rev. 2 | Page 4 of 9 | www.onsemi.com
PACUSBVBD1/D2/D3
Performance Information
Capacitance vs. Voltage
The C1 capacitance value as a function of DC voltage across it is presented in
Diode
Capacitance vs. DC
Voltage (Normalized)
. The curve is normalized to a capacitance of 1.0 capacitance units at 2.5 VDC.
Figure 1. Diode Capacitance vs. DC Voltage (Normalized)
Insertion Loss vs. Frequency Characteristics
Figure 2. Insertion Loss vs. Frequency Performance Curve, PACUSBVB-D1 (SOT23-6)
Rev. 2 | Page 5 of 9 | www.onsemi.com
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