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ML4102

Description
Laser Diode, 780nm
CategoryLED optoelectronic/LED    photoelectric   
File Size237KB,8 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

ML4102 Overview

Laser Diode, 780nm

ML4102 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMitsubishi
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward voltage2.5 V
JESD-609 codee0
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature65 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power3 mW
peak wavelength780 nm
Maximum response time7e-10 s
Semiconductor materialAlGaAs
shapeROUND
size3 mm
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum threshold current60 mA

ML4102 Related Products

ML4102 ML4412N ML4402
Description Laser Diode, 780nm Laser Diode, 780nm Laser Diode, 780nm
Maker Mitsubishi Mitsubishi Mitsubishi
Reach Compliance Code unknown unknown unknown
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward voltage 2.5 V 2.5 V 2.5 V
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Number of functions 1 1 1
Maximum operating temperature 65 °C 65 °C 65 °C
Minimum operating temperature -40 °C -40 °C -40 °C
Optoelectronic device types LASER DIODE LASER DIODE LASER DIODE
Nominal output power 3 mW 3 mW 3 mW
peak wavelength 780 nm 780 nm 780 nm
Maximum response time 7e-10 s 7e-10 s 7e-10 s
Semiconductor material AlGaAs AlGaAs AlGaAs
shape ROUND ROUND ROUND
size 3 mm 3 mm 3 mm
surface mount NO NO NO
Maximum threshold current 60 mA 60 mA 60 mA
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