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BC328P

Description
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

BC328P Overview

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3

BC328P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.7 V

BC328P Related Products

BC328P BC327P BFS98 BC338P BFS59 ZTX337 BFS96 BC337P ZTX338 ZTX537
Description Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 STYLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 STYLE, E-LINE PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 1 A 0.8 A 1 A 0.8 A 1 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 25 V 45 V 60 V 25 V 30 V 45 V 30 V 45 V 25 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 100 40 100 40 100 40 100 100 100
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP NPN NPN NPN PNP NPN NPN PNP
Maximum power dissipation(Abs) 0.625 W 0.625 W 0.5 W 0.625 W 0.5 W 0.75 W 0.5 W 0.625 W 0.75 W 0.75 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 150 MHz 100 MHz 150 MHz 200 MHz 150 MHz 100 MHz 200 MHz 200 MHz
VCEsat-Max 0.7 V 0.7 V 0.35 V 0.7 V 0.35 V 0.7 V 0.35 V 0.7 V 0.7 V 0.7 V
Peak Reflow Temperature (Celsius) 235 235 235 235 235 - 235 235 235 235
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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