Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC1788
4.0±0.2
3.0±0.2
Unit: mm
s
Features
q
q
q
q
Low collector to emitter saturation voltage V
CE(sat)
.
Optimum for low-voltage operation and for converters.
Allowing supply with the radial taping.
Optimum for high-density mounting.
marking
+0.2
0.45–0.1
0.7±0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
150
15
*2
min
typ
max
–100
–1
2.0±0.2
s
Absolute Maximum Ratings
(Ta=25˚C)
15.6±0.5
Unit
nA
µA
V
V
V
–25
–20
–7
90
25
– 0.4
–1.2
220
V
V
MHz
25
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
Rank
h
FE1
1
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