NP60N055KUG-E1-AY datasheet, PDF

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NP60N055KUG-E1-AY: DescriptionPower Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, MP-25ZK, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size135KB，7 Pages; ManufacturerNEC Electronics; Environmental Compliance

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NP60N055KUG-E1-AY Overview

Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, MP-25ZK, 3 PIN

NP60N055KUG-E1-AY Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NEC Electronics
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	60 A
Maximum drain-source on-resistance	0.0094 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP60N055KUG

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The NP60N055KUG is N-channel MOS Field Effect

Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

NP60N055KUG

PACKAGE

TO-263 (MP-25ZK)

FEATURES

•

Channel temperature 175 degree rating

•

Super low on-state resistance

DS(on)

= 9.4 mΩ MAX. (V

= 10 V, I

= 30 A)

•

Low C

iss

: C

iss

= 3700 pF TYP.

(TO-263)

ABSOLUTE MAXIMUM RATINGS (T

= 25°C)

Drain to Source Voltage (V

= 0 V)

Gate to Source Voltage (V

= 0 V)

Drain Current (DC) (T

= 25°C)

Drain Current (pulse)

Note1

DSS

GSS

D(DC)

D(pulse)

stg

±20

±60

±240

1.8

175

−55

to +175

°C

Total Power Dissipation (T

= 25°C)

Total Power Dissipation (T

= 25°C)

Channel Temperature

Storage Temperature

Repetitive Avalanche Current

Repetitive Avalanche Energy

Note2

Notes 1.

≤

s, Duty Cycle

≤

150°C, V

= 28 V, R

= 25

Ω,

= 20

→

0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

th(ch-C)

th(ch-A)

1.70

83.3

°C/W

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16862EJ1V0DS00 (1st edition)

Date Published September 2004 NS CP(K)

Printed in Japan

2004

NP60N055KUG-E1-AY Related Products

	NP60N055KUG-E1-AY	NP60N055KUG-E2-AZ	NP60N055KUG-E2	NP60N055KUG-E1-AZ	NP60N055KUG	NP60N055KUG-E1
Description	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, MP-25ZK, 3 PIN	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN	Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN
Is it Rohs certified?	conform to	conform to	incompatible	conform to	incompatible	incompatible
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, TO-263, MP-25ZK, 3 PIN	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	TO-263, MP-25ZK, 3 PIN	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V	55 V	55 V	55 V
Maximum drain current (ID)	60 A	60 A	60 A	60 A	60 A	60 A
Maximum drain-source on-resistance	0.0094 Ω	0.0094 Ω	0.0094 Ω	0.0094 Ω	0.0094 Ω	0.0094 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
JESD-609 code	e3	e6	e0	e6	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	240 A	240 A	240 A	240 A	240 A	240 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal surface	MATTE TIN	TIN BISMUTH	TIN LEAD	TIN BISMUTH	TIN LEAD	TIN LEAD
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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