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Datasheet> All Categories > Discrete semiconductor> The transistor> NP60N055KUG-E1-AZ
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NP60N055KUG-E1-AZ

Description
Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size135KB，7 Pages
ManufacturerNEC Electronics
Environmental Compliance
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NP60N055KUG-E1-AZ Overview

Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN

NP60N055KUG-E1-AZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNEC Electronics
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.0094 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee6
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP60N055KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP60N055KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP60N055KUG
PACKAGE
TO-263 (MP-25ZK)
FEATURES
•
Channel temperature 175 degree rating
•
Super low on-state resistance
R
DS(on)
= 9.4 mΩ MAX. (V
GS
= 10 V, I
D
= 30 A)
•
Low C
iss
: C
iss
= 3700 pF TYP.
(TO-263)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
55
±20
±60
±240
1.8
88
175
−55
to +175
27
73
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I
AR
E
AR
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
T
ch
<
150°C, V
DD
= 28 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
1.70
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16862EJ1V0DS00 (1st edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004

NP60N055KUG-E1-AZ Related Products

NP60N055KUG-E1-AZ NP60N055KUG-E2-AZ NP60N055KUG-E2 NP60N055KUG-E1-AY NP60N055KUG NP60N055KUG-E1
Description Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, MP-25ZK, 3 PIN Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, MP-25ZK, 3 PIN Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN Power Field-Effect Transistor, 60A I(D), 55V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, MP-25ZK, 3 PIN
Is it Rohs certified? conform to conform to incompatible conform to incompatible incompatible
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction SMALL OUTLINE, R-PSSO-G2 LEAD FREE, TO-263, MP-25ZK, 3 PIN SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 TO-263, MP-25ZK, 3 PIN SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V 55 V 55 V 55 V
Maximum drain current (ID) 60 A 60 A 60 A 60 A 60 A 60 A
Maximum drain-source on-resistance 0.0094 Ω 0.0094 Ω 0.0094 Ω 0.0094 Ω 0.0094 Ω 0.0094 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e6 e6 e0 e3 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 240 A 240 A 240 A 240 A 240 A 240 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface TIN BISMUTH TIN BISMUTH TIN LEAD MATTE TIN TIN LEAD TIN LEAD
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON

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