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2SC3326-B(T5LKEHIF

Description
Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size274KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC3326-B(T5LKEHIF Overview

Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon

2SC3326-B(T5LKEHIF Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)350
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Base Number Matches1
2SC3326
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25 V (min)
High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
=
−2
V, I
C
=
−4
mA)
Low on resistance: R
ON
= 1
(typ.) (I
B
= 5 mA)
High DC current gain: h
FE
= 200 to 1200
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
20
25
300
60
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-12
1
2014-03-01

2SC3326-B(T5LKEHIF Related Products

2SC3326-B(T5LKEHIF 2SC3326-ALF(T 2SC3326-A(T5LFT) 2SC3326-B,LF 2SC3326-A,LF
Description Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS NPN 20V 0.3A S-MINI TRANS NPN 20V 0.3A S-MINI
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code unknow unknown unknown unknown -
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A -
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V -
Configuration SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 350 200 200 350 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 1 1 -
Number of terminals 3 3 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type NPN NPN NPN NPN -
surface mount YES YES YES YES -
Terminal form GULL WING GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL DUAL -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz -
Base Number Matches 1 1 1 1 -
Maker - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor -
Collector-based maximum capacity - 7 pF 7 pF 7 pF -
Maximum operating temperature - 125 °C 125 °C 125 °C -
Maximum power consumption environment - 0.15 W 0.15 W 0.15 W -
Maximum power dissipation(Abs) - 0.15 W 0.15 W 0.15 W -
VCEsat-Max - 0.1 V 0.1 V 0.1 V -

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