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2SC3326-A,LF

Description
TRANS NPN 20V 0.3A S-MINI
Categorysemiconductor    Discrete semiconductor   
File Size274KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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2SC3326-A,LF Overview

TRANS NPN 20V 0.3A S-MINI

2SC3326-A,LF Parametric

Parameter NameAttribute value
Transistor typeNPN
Current - Collector (Ic) (Maximum)300mA
Voltage - collector-emitter breakdown (maximum)20V
Vce saturation value (maximum value) when different Ib,Ic100mV @ 3mA,30mA
Current - collector cutoff (maximum)100nA(ICBO)
DC current gain (hFE) at different Ic, Vce (minimum value)200 @ 4mA,2V
Power - Max150mW
Frequency - Transition30MHz
Operating temperature125°C(TJ)
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingTO-236
2SC3326
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25 V (min)
High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
=
−2
V, I
C
=
−4
mA)
Low on resistance: R
ON
= 1
(typ.) (I
B
= 5 mA)
High DC current gain: h
FE
= 200 to 1200
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
20
25
300
60
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-12
1
2014-03-01

2SC3326-A,LF Related Products

2SC3326-A,LF 2SC3326-B(T5LKEHIF 2SC3326-ALF(T 2SC3326-A(T5LFT) 2SC3326-B,LF
Description TRANS NPN 20V 0.3A S-MINI Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor TRANS NPN 20V 0.3A S-MINI
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - unknow unknown unknown unknown
Maximum collector current (IC) - 0.3 A 0.3 A 0.3 A 0.3 A
Collector-emitter maximum voltage - 20 V 20 V 20 V 20 V
Configuration - SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) - 350 200 200 350
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components - 1 1 1 1
Number of terminals - 3 3 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - NPN NPN NPN NPN
surface mount - YES YES YES YES
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL DUAL
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) - 30 MHz 30 MHz 30 MHz 30 MHz
Base Number Matches - 1 1 1 1
Maker - - Toshiba Semiconductor Toshiba Semiconductor Toshiba Semiconductor
Collector-based maximum capacity - - 7 pF 7 pF 7 pF
Maximum operating temperature - - 125 °C 125 °C 125 °C
Maximum power consumption environment - - 0.15 W 0.15 W 0.15 W
Maximum power dissipation(Abs) - - 0.15 W 0.15 W 0.15 W
VCEsat-Max - - 0.1 V 0.1 V 0.1 V

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