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2SC3326-ALF(T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size274KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC3326-ALF(T Overview

Small Signal Bipolar Transistor

2SC3326-ALF(T Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.3 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.15 W
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.1 V
Base Number Matches1
2SC3326
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC3326
For Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25 V (min)
High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
=
−2
V, I
C
=
−4
mA)
Low on resistance: R
ON
= 1
(typ.) (I
B
= 5 mA)
High DC current gain: h
FE
= 200 to 1200
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
50
20
25
300
60
150
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.012 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1982-12
1
2014-03-01

2SC3326-ALF(T Related Products

2SC3326-ALF(T 2SC3326-B(T5LKEHIF 2SC3326-A(T5LFT) 2SC3326-B,LF 2SC3326-A,LF
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor TRANS NPN 20V 0.3A S-MINI TRANS NPN 20V 0.3A S-MINI
Maker Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Reach Compliance Code unknown unknow unknown unknown -
Maximum collector current (IC) 0.3 A 0.3 A 0.3 A 0.3 A -
Collector-based maximum capacity 7 pF - 7 pF 7 pF -
Collector-emitter maximum voltage 20 V 20 V 20 V 20 V -
Configuration SINGLE SINGLE SINGLE SINGLE -
Minimum DC current gain (hFE) 200 350 200 350 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 1 1 -
Number of terminals 3 3 3 3 -
Maximum operating temperature 125 °C - 125 °C 125 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Polarity/channel type NPN NPN NPN NPN -
Maximum power consumption environment 0.15 W - 0.15 W 0.15 W -
Maximum power dissipation(Abs) 0.15 W - 0.15 W 0.15 W -
surface mount YES YES YES YES -
Terminal form GULL WING GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL DUAL -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz -
VCEsat-Max 0.1 V - 0.1 V 0.1 V -
Base Number Matches 1 1 1 1 -

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