2N3261 datasheet, PDF - EEWORLD Datasheet

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2N3261: Description500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18; CategoryDiscrete semiconductor The transistor; File Size70KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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2N3261 Overview

500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18

2N3261 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	16 ns
Maximum opening time (tons)	13 ns
VCEsat-Max	0.35 V
Base Number Matches	1

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2N3261 Related Products

	2N3261	BD321C	BSX59	BSX60
Description	500mA, 15V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18	2A, 60V, NPN, Si, POWER TRANSISTOR, TO-39	1000mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39	1000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.5 A	2 A	1 A	1 A
Collector-emitter maximum voltage	15 V	60 V	45 V	30 V
Configuration	SINGLE	DARLINGTON	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	10000	25	30
JEDEC-95 code	TO-18	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235	235	235	235
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	5 W	0.8 W	0.8 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	CECC	CECC	CECC	CECC
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	300 MHz	80 MHz	250 MHz	250 MHz
VCEsat-Max	0.35 V	1.7 V	0.3 V	0.3 V
Maximum off time (toff)	16 ns	-	60 ns	70 ns
Maximum opening time (tons)	13 ns	-	35 ns	40 ns
Maker	-	Diodes	Diodes	Diodes

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