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MJE13005A(TO-220S)

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size115KB,4 Pages
ManufacturerShenzhen SI Semiconductors Co., Ltd.
Download Datasheet Parametric View All

MJE13005A(TO-220S) Overview

Transistor

MJE13005A(TO-220S) Parametric

Parameter NameAttribute value
MakerShenzhen SI Semiconductors Co., Ltd.
package instruction,
Reach Compliance Codeunknown
Shenzhen SI Semiconductors Co., LTD.
Product Specification
MJE
/MJE SERIES TRANSISTORS
RoHS
MJE13005A
WIDE SOA
FEATURES
HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
RoHS COMPLIANT
APPLICATION:
FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
Tc=25°C
°
Absolute Maximum Ratings Tc=25°C
°
PARAMETER
-
Collector-Base Voltage
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
TO-220/TO-220S
UNIT
V
V
V
A
W
°C
°C
VALUE
700
400
9
6.0
80
150
-65-150
Tc=25°C
°
Electronic Characteristics
CHARACTERISTICS
-
Collector-Base Cutoff Current
-
Collector-Emitter Cutoff Current
-
Collector-Emitter Voltage
-
Emitter- Base Voltage
-
Collector-Emitter Saturation Voltage
-
Base-Emitter Saturation Voltage
Tc=25°C
°
SYMBOL
I
CBO
I
CEO
V
CEO
V
EBO
Vcesat
Vbesat
TEST CONDITION
V
CB
=700V
V
CE
=400V,I
B
=0
I
C
=10mA,I
B
=0
I
E
=1mA,I
C
=0
I
C
=1A,I
B
=0.2A
I
C
=4.0A,I
B
=1.0A
I
C
=1A,I
B
=0.2A
V
CE
=5V,I
C
=10mA
7
10
5
2.0
4.0
µs
0.8
40
400
9
0.4
V
1.0
1.2
V
MIN
MAX
100
250
UNIT
µA
µA
V
V
DC Current Gain
h
FE
V
CE
=5V,I
C
=1.0A
V
CE
=5V,I
C
=6.0A
Storage Time
t
S
t
f
V
CC
=5V,I
C
=0.5A
(UI9600)
Falling Time
1
Si semiconductors
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