Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
·
2SB827
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD1063
・Wide
area of safe operation
・Low
collector-emitter saturation voltage :
V
CE(sat)
=(–)0.4V max.
APPLICATIONS
・Universal
high current switching as solenoid
driving,high speed inverter and converter.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
固电
IN
导½
半
Fig.1 simplified outline (TO-3PN) and symbol
Collector-emitter voltage
Emitter-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-50
-6
-7
-14
UNIT
V
V
V
A
A
W
℃
℃
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-1mA ;R
BE
=
∞
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-4A; I
B
=-0.4A
V
CB
=-40V ;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-50
-60
-6
TYP.
2SB827
MAX
UNIT
V
V
V
-0.4
-0.1
-0.1
280
V
mA
mA
Switching times
t
on
t
stg
t
f
固电
Fall time
Transition frequency
导½
半
ANG
Turn-on time
Storage time
CH
IN
R
100-200
MIC
E SE
DUC
ON
10
OR
T
MHz
0.20
0.70
0.10
μs
μs
μs
I
C
=-2.0A; I
B1
=-I
B2
=-0.2A
V
CC
=-20V;R
L
=10Ω
h
FE-1
Classifications
Q
70-140
S
140-280
2
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