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2SB827R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size202KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB827R Overview

Transistor

2SB827R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
·
2SB827
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD1063
・Wide
area of safe operation
・Low
collector-emitter saturation voltage :
V
CE(sat)
=(–)0.4V max.
APPLICATIONS
・Universal
high current switching as solenoid
driving,high speed inverter and converter.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
固电
IN
导½
Fig.1 simplified outline (TO-3PN) and symbol
Collector-emitter voltage
Emitter-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
UCT
ND
O
VALUE
-60
-50
-6
-7
-14
UNIT
V
V
V
A
A
W
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
60
150
-55~150

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Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1
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