PJD1616CCX datasheet, PDF - EEWORLD Datasheet

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PJD1616CCX: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size224KB，4 Pages; ManufacturerPromax-Johnton Electronic Corporation

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PJD1616CCX Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

PJD1616CCX Parametric

Parameter Name	Attribute value
Maker	Promax-Johnton Electronic Corporation
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	81
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	160 MHz

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PJD1616C

NPN Epitaxial Silicon Transistor

AUDIO FREQ UENCY PO WER AMPLIFIER

•

MEDIUM SPEED SWITCHING

TO-92

SOT-23

ABSOLUTE MAXIMUM RATINGS

(Ta = 25℃ )

Characteristic

Collector-base Voltage

Collector-Emitter Voltage

Emitter-base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Collector Dissipation TO-92

SOT-

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

Tstg

Rating

120

0.5

0.75

0.3

150

-55~150

Unit

℃

P in :

1. Base

2. Emitter

3. Colletor

P in :

1. Emitter

2. Colletor

3. Base

ORDERING INFORMATION

Device

PJD1616CCT

PJD1616CCX

Operating Operature

-20℃½+85℃

Package

TO-92

SOT-23

•

PW≤10ms, Duty Cycle≤50%

ELECTRICAL CHARACTERISTICS

(Ta=25℃)

Characte ristic

Collector Cutoff Current

Emitter Cutoff Current

*DC Current Gain

**Base Emitter On Voltage

*Collector Emitter Saturation Voltage

*Base Emitter Saturation Voltage

Output Capacitance

Current Gain Bandwidth Product

Turn On Time

Storage Time

Fall Time

Symbol

CBO

EBO

FE1

FE2

(on)

(sat)

ton

Te st Condition

=60V,I

=6V,I

=2V,I

=50mA

=2V,I

=0.5A

=2V,I

=20mA

=400mA,I

=40mA

IC=500mA,I

=50mA

=10V,I

=0,f=1MHz

=2V,I

=100mA

=10V,I

=100mA

1= -I

2=10mA

(off)= -2~-3V

Min

Typ

Max

100

Unit

135

600

640

0.15

0.9

100

160

0.07

0.95

0.07

400

700

0.3

1.2

MHz

μs

•

Pulse Test:PW≤350μs, Duty Cycle≤2%

(1) CLASSIFICATION

Classification

hFE(1)

135-270

200-400

300-600

1-4

2002/01.rev.A

PJD1616CCX Related Products

	PJD1616CCX	PJD1616CCT
Description	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
Maker	Promax-Johnton Electronic Corporation	Promax-Johnton Electronic Corporation
Parts packaging code	SOT-23	TO-92
package instruction	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	81	81
JESD-30 code	R-PDSO-G3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	160 MHz	160 MHz

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