PJD1616C
NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY PO WER AMPLIFIER
•
MEDIUM SPEED SWITCHING
TO-92
SOT-23
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃ )
Characteristic
Collector-base Voltage
Collector-Emitter Voltage
Emitter-base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation TO-92
SOT-
23
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
P
D
T
J
Tstg
Rating
120
60
6
0.5
1
0.75
0.3
150
-55~150
Unit
V
V
V
A
A
W
W
℃
℃
P in :
1. Base
2. Emitter
3. Colletor
P in :
1. Emitter
2. Colletor
3. Base
ORDERING INFORMATION
Device
PJD1616CCT
PJD1616CCX
Operating Operature
-20℃½+85℃
Package
TO-92
SOT-23
•
PW≤10ms, Duty Cycle≤50%
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
Characte ristic
Collector Cutoff Current
Emitter Cutoff Current
*DC Current Gain
**Base Emitter On Voltage
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
(on)
V
CE
(sat)
V
BE
(sat)
C
Ob
f
T
ton
ts
tf
Te st Condition
V
CB
=60V,I
E
=0
V
EB
=6V,I
C
=0
V
CE
=2V,I
C
=50mA
V
CE
=2V,I
C
=0.5A
V
CE
=2V,I
C
=20mA
I
C
=400mA,I
B
=40mA
IC=500mA,I
B
=50mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=2V,I
C
=100mA
V
CC
=10V,I
C
=100mA
I
B
1= -I
B
2=10mA
V
BE
(off)= -2~-3V
Min
Typ
Max
100
100
Unit
nA
nA
135
81
600
640
0.15
0.9
19
100
160
0.07
0.95
0.07
400
700
0.3
1.2
mV
V
V
pF
MHz
μs
μs
μs
•
Pulse Test:PW≤350μs, Duty Cycle≤2%
h
FE
(1) CLASSIFICATION
Classification
hFE(1)
Y
135-270
G
200-400
L
300-600
1-4
2002/01.rev.A
PJD1616C
NPN Epitaxial Silicon Transistor
STATIC CHARACTERISTIC
STATIC CHARACTERISTIC
DC CURRENT GAIN
VOLTAGE
BASE-EMITTER SATURATION VOLTAGE
OLLECTOR-EMITTER SATURATION
SAFE OPERATING AREA
POWER DERATING
2-4
2002/01.rev.A
PJD1616C
NPN Epitaxial Silicon Transistor
COLLECTOR OUTPUT CAPACITANCE
CURRENT GAIN-BANDWIDTH PRODUCT
SWITCHING TIME
3-4
2002/01.rev.A
ARM Technology
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