V
RRM
=
I
F
=
4500 V
110 A
Fast-Diode Die
5SLY 12N4500
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA 1674-00 Jan 08
•
•
•
•
Ultra low losses
Fast and soft reverse-recovery
Large SOA
Passivation: SIPOS and Silicon Nitride
Maximum rated values
Parameter
1)
Symbol
V
RRM
I
F
I
FRM
T
vj
Conditions
min
max
4500
110
Unit
V
A
A
°C
Repetitive peak reverse voltage
Continuous forward current
Repetitive peak forward current
Junction temperature
1)
Limited by T
vjmax
-40
220
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values
Parameter
Continuous forward voltage
Continuous reverse current
Peak reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
2)
2)
Symbol
V
F
I
R
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 110 A
V
R
= 4500 V
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
I
F
= 110 A,
V
R
= 2800 V,
di/dt = 350 A/µs,
L
σ
= 3000 nH,
Inductive load,
Switch:
2x 5SMY12N4500
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
typ
3.05
3.50
3
2
120
132
90
140
1140
1730
140
235
max
Unit
V
V
µA
4
mA
A
A
µC
µC
ns
ns
mJ
mJ
Characteristic values according to IEC 60747 - 2
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SLY 12N4500
220
350
300
E
rec
165
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
250
Q
rr
200
I
F
[A]
110
25 °C
125 °C
55
150
I
rr
100
V
CC
= 2800 V
di/dt = 300 A/µs
T
vj
= 125 °C
L
σ
= 3 µH
0
55
110
165
I
F
[A]
220
275
330
50
0
0
1
2
V
F
[V]
3
4
5
0
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
150
V
CC
= 2800 V
I
F
= 110 A
di/dt = 300 A/µs
T
vj
= 125 °C
L
σ
= 3 µH
0
500
450
V
CC
= 2800 V
I
F
= 110 A
T
vj
= 125 °C
L
σ
= 3 µH
100
-500
400
E
rec
[mJ], I
rr
[A], Q
rr
[µC]
350
300
250
200
150
100
E
rec
50
I
R
0
-1000
V
R
[V]
I
R
[A]
-1500
I
rr
-50
-2000
Q
rr
-100
V
R
-150
0
1
2
3
time [µs]
4
5
6
-2500
50
-3000
0
0
100
200
300
di/dt [A/µs]
400
500
600
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1674-00 Jan 08
page 2 of 3
5SLY 12N4500
Mechanical properties
Parameter
Overall die L
x
W
Dimensions
exposed
L
x
W
front metal
thickness
Metallization
3)
3)
Unit
14.3 x 14.3
9.0 x 9.0
570
±
15
AlSi1 + Al
AlSi1 + TiNiAg
4+8
1.8 + 1.2
mm
mm
µm
µm
µm
front (A)
back (K)
For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA 1674-00 Jan 08
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