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2SD1499R

Description
Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
CategoryDiscrete semiconductor    The transistor   
File Size78KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SD1499R Overview

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3

2SD1499R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
Features
Extremely satisfactory linearity of the forward current transfer ratio h
FE
Wide safe operation area
High transition frequency f
T
Full-pack package which can be installed to the heat sink with one screw.
16.7
±0.3
Unit: mm
0.7
±0.1
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
100
100
5
5
8
40
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
14.0
±0.5
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
BE
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
V
CE
=
5 V, I
C
=
3 A
V
CB
=
100 V, I
E
=
0
V
EB
=
3 V, I
C
=
0
V
CE
=
5 V, I
C
=
20 mA
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.3 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
1 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
20
90
20
40
20
2.0
V
MHz
pF
200
Min
Typ
Max
1.8
50
50
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
40 to 80
Q
60 to120
P
100 to 200
Publication date: February 2003
SJD00200BED
1

2SD1499R Related Products

2SD1499R 2SD1499P 2SD1499Q
Description Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
Is it Rohs certified? conform to conform to conform to
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 5 A 5 A 5 A
Collector-emitter maximum voltage 100 V 100 V 100 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 100 60
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 2 W 2 W 2 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1
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