Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
■
Features
•
Extremely satisfactory linearity of the forward current transfer ratio h
FE
•
Wide safe operation area
•
High transition frequency f
T
•
Full-pack package which can be installed to the heat sink with one screw.
16.7
±0.3
Unit: mm
0.7
±0.1
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
T
a
=
25°C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
100
100
5
5
8
40
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
14.0
±0.5
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
BE
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
V
CE
=
5 V, I
C
=
3 A
V
CB
=
100 V, I
E
=
0
V
EB
=
3 V, I
C
=
0
V
CE
=
5 V, I
C
=
20 mA
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.3 A
V
CE
=
5 V, I
C
=
0.5 A, f
=
1 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
20
90
20
40
20
2.0
V
MHz
pF
200
Min
Typ
Max
1.8
50
50
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
40 to 80
Q
60 to120
P
100 to 200
Publication date: February 2003
SJD00200BED
1
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•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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