Power Transistors
2SD1894
Silicon NPN triple diffusion planar type darlington
Unit: mm
For power amplification
Complementary to 2SB1254
■
Features
•
Optimum for 60 W HiFi output
•
High forward current transfer ratio h
FE
•
Low collector-emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
21.0
±0.5
15.0
±0.3
(0.7)
5.0
±0.2
(3.2)
11.0
±0.2
φ
3.2
±0.1
15.0
±0.2
(3.5)
Solder Dip
2.0
±0.2
1.1
±0.1
2.0
±0.1
0.6
±0.2
16.2
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
160
140
5
7
12
70
3
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1
5.45
±0.3
10.9
±0.5
2
3
1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
=
30 mA, I
B
=
0
V
CB
=
160 V, I
E
=
0
V
CE
=
140 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
6 A
I
C
=
6 A, I
B
=
6 mA
I
C
=
6 A, I
B
=
6 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
6 A, I
B1
=
6 mA, I
B2
= −6
mA
V
CC
=
50 V
20
2.5
5.0
2.5
2 000
5 000
30 000
2.5
3.0
V
V
MHz
µs
µs
µs
Min
140
100
100
100
Typ
Max
Unit
V
µA
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
S
P
5 000 to 15 000 7 000 to 21 000 8 000 to 30 000
Publication date: September 2003
SJD00234BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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(4) The products described in this material are intended to be used for standard applications or general
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
51mcu
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